ald-process-controller

// Atomic Layer Deposition skill for conformal thin film deposition with atomic-level thickness control

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updated:March 4, 2026

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SKILL.md Frontmatter

nameald-process-controller

descriptionAtomic Layer Deposition skill for conformal thin film deposition with atomic-level thickness control

allowed-toolsRead,Write,Glob,Grep,Bash

metadata[object Object]

ALD Process Controller

Purpose

The ALD Process Controller skill provides comprehensive atomic layer deposition process control, enabling conformal thin film growth with atomic-level precision through optimized pulse sequences and in-situ monitoring.

Capabilities

Precursor pulse/purge optimization
Growth per cycle (GPC) characterization
Film uniformity mapping
Conformality assessment
In-situ monitoring integration
Multi-component film design

Usage Guidelines

ALD Process Control

Saturation Studies
- Vary pulse times
- Identify saturation dose
- Optimize purge times
Process Window
- Determine ALD window
- Optimize temperature
- Monitor GPC stability
Film Quality
- Characterize uniformity
- Measure conformality
- Assess impurity levels

Process Integration

Thin Film Deposition Process Optimization
Nanodevice Integration Process Flow

Input Schema

{
  "material": "string",
  "precursor_a": "string",
  "precursor_b": "string",
  "target_thickness": "number (nm)",
  "substrate": "string",
  "temperature": "number (C)"
}

Output Schema

{
  "optimized_recipe": {
    "precursor_a_pulse": "number (s)",
    "purge_a": "number (s)",
    "precursor_b_pulse": "number (s)",
    "purge_b": "number (s)"
  },
  "gpc": "number (Angstrom/cycle)",
  "cycles_required": "number",
  "uniformity": "number (%)",
  "conformality": "number (% step coverage)"
}